| PART |
Description |
Maker |
| ULN2004L ULQ2004L 2003 ULN2023A ULN2023L ULN2024A |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Low-density access line, ARM-based 32-bit MCU with 16 or 32 KB Flash, 5 timers, ADC and 4 communication interfaces 高电压，大电流达林顿阵列
Low-density performance line, ARM-based 32-bit MCU with 16 or 32 KB Flash, USB, CAN, 6 timers, 2 ADCs, 6 communication interfaces
Medium-density access line, ARM-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces
HIGH-VOLTAGE/HIGH-CURRENTDARLINGTONARRAYS
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE HIGH-CURRENT DARLINGTON ARRAYS
7-Channel High-Current Darlington Array
High-Voltage, High-Current Darlington Arrays(杈???靛?95V锛??浜???靛钩?昏??佃矾??????澶?????璐?浇?寸??ュ???????澶х?娴?揪??】?靛?)
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS
|
NetPower Technologies, Inc.
Allegro MicroSystems, Inc.
AllegroMicroSystems
ALLEGRO[Allegro MicroSystems]
|
| M29W640D M29DW323 |
Excalibur High-Speed Low-Power Precision Quad Operational Amplifier 16-SOIC
FLASH NOR HIGH DENSITY & CONSUMER
|
ST Microelectronics
意法半导
STMicroelectronics
|
| STM32F103ZEH7XXX STM32F103ZEH6XXX STM32F103VET7XXX |
High-density performance line ARM-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces
|
STMicroelectronics
|
| SET111411 SET111403 SET111412 SET111419 SET111404 |
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?400V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??)
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?1000V,娓╁害55???骞冲??存??垫?30A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??)
3 PHASE, 30 A, SILICON, BRIDGE RECTIFIER DIODE
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?150V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴??涓???ㄦ尝妗ユ?娴??)
High Density,High Current,3-Phase Full Wave Bridge Rectifier(反向电压1000V,温度55℃时平均整流电流45A,高密大电三相全波桥整流器) 高密度，大电3 -相全波桥式整流器（反向电000V的温5℃时平均整流电流45A条，高密度，大电流，三相全波桥整流器
HIGH CURRENT, 3-PHASE FULL WAVE BRIDGE ASSEMBLY
|
Semtech, Corp.
Semtech Corporation
|
| ISPLSI1016EA ISPLSI1016EA-100LJ44 ISPLSI1016EA-100 |
125 MHz in-system prommable high density PLD
100 MHz in-system prommable high density PLD
In-System Programmable High Density PLD
200 MHz in-system prommable high density PLD
|
Lattice Semiconductor
|
| 1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/8 |
60 MHz in-system prommable high density PLD
In-System Programmable High Density PLD EE PLD, 25 ns, PQCC68
:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
http://
|
| ATV2500H ATV2500H-25DC ATV2500H-25DI ATV2500H-25DM |
120 OHM 1% 1/8 W
High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CDIP40
High-Density UV-Erasable Programmable Logic Device OT PLD, 35 ns, PQCC44
High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CQCC44
High-Density UV-Erasable Programmable Logic Device OT PLD, 30 ns, PDIP40
High-Density UV-Erasable Programmable Logic Device UV PLD, 30 ns, CQCC44
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V，温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V，温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度，高电压，标准恢复倍流整流（反向电5000V，温25℃时平均整流电流0.4A，高密度，高电压，标准恢复倍增整流器）
|
Semtech Corporation
Semtech, Corp.
|
| MCN51-8S3-PFA MCN51-16P2-DS MCN51-16P2-PFA MCN51-1 |
CAP 0.1UF 50V 20% Z5U RAD.20 .20X.20 BULK 高电流，高密度，电源连接
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 高电流，高密度，电源连接
High Current, High Density, Power Connectors 高电流，高密度，电源连接
High Current / High Density / Power Connectors
|
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
|
